Quantitative Dopant Profiling in the SEM Including Surface States

被引：0

作者：

Chee, K. W. A. ^{[1
]}

Rodenburg, C. ^{[2
]}

Humphreys, C. J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England

[2] Univ Sheffield, Dept Engn Mat, Sheffield S1 3JD, S Yorkshire, England

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 | 2008年 / 120卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

To study the basis of dopant contrast in secondary electron (SE) imaging in the scanning electron microscope (SEM), we have performed experiments to show the dependence of the dopant contrast on the surface charges, and have used computer modelling to investigate the effects of surface states and doping concentrations on the surface band bending and external patch fields. We have tested the validity Of Our calculations against experimentally measured SE energy spectra and derived a density of surface states in silicon of 1-3 x 10(-12) cm(-2). The method described in this paper will help to enable the accurate quantification of dopant mapping of semiconductors in the SEM.

引用

页码：407 / +

页数：2

共 9 条

[1] Electronic contribution to secondary electron compositional contrast in the scanning electron microscope
Castell, MR
Perovic, DD
Lafontaine, H
[J]. ULTRAMICROSCOPY, 1997, 69 (04) : 279 - 287
[2] Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update
El-Gomati, M
Zaggout, F
Jayacody, H
Tear, S
Wilson, K
[J]. SURFACE AND INTERFACE ANALYSIS, 2005, 37 (11) : 901 - 911
[3] Dopant profiling with the scanning electron microscope - A study of Si
Elliott, SL
Broom, RF
Humphreys, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9116 - 9122
[4] High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging
Kazemian, P.
Mentink, S. A. M.
Rodenburg, C.
Humphreys, C. J.
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)
[5] FIELD-EMISSION SEM IMAGING OF COMPOSITIONAL AND DOPING LAYER SEMICONDUCTOR SUPERLATTICES
PEROVIC, DD
CASTELL, MR
HOWIE, A
LAVOIE, C
TIEDJE, T
COLE, JSW
[J]. ULTRAMICROSCOPY, 1995, 58 (01) : 104 - 113
[6] PEROVIC DD, 1997, P INT CENT S EL CAMB
[7] Mechanism for secondary electron dopant contrast in the SEM
Sealy, CP
Castell, MR
Wilshaw, PR
[J]. JOURNAL OF ELECTRON MICROSCOPY, 2000, 49 (02): : 311 - 321
[8] Mapping electrically active dopant profiles by field-emission scanning electron microscopy
Turan, R
Perovic, DD
Houghton, DC
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (11) : 1593 - 1595
[9] Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
Venables, D
Jain, H
Collins, DC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 362 - 366

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