Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

被引：94

作者：

Chiu, P. T. ^{[1
]}

Law, D. C. ^{[1
]}

Woo, R. L. ^{[1
]}

Singer, S. B. ^{[1
]}

Bhusari, D. ^{[1
]}

Hong, W. D. ^{[1
]}

Zakaria, A. ^{[1
]}

Boisvert, J. ^{[1
]}

Mesropian, S. ^{[1
]}

King, R. R. ^{[1
]}

Karam, N. H. ^{[1
]}

机构：

[1] Spectrolab Inc, Sylmar, CA 91342 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2014年 / 4卷 / 01期

关键词：

Direct wafer bonding; multijunction cells;

D O I：

10.1109/JPHOTOV.2013.2279336

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun V-oc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10x concentration to a maximum value close to 41%.

引用

页码：493 / 497

页数：5

共 10 条

[1] [Anonymous], P 37 IEEEE PHOT SPEC
[2] Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
Jackrel, David B.
Bank, Seth R.
Yuen, Homan B.
Wistey, Mark A.
Harris, James S., Jr.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
[3] King R. R., 2009, P 24 EUR PHOT SOL EN, P21
[4] Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
Kurtz, SR
Allerman, AA
Seager, CH
Sieg, RM
Jones, ED
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (03) : 400 - 402
[5] Moriarty T, 2012, 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), P1291, DOI 10.1109/PVSC.2012.6317838
[6] Patel P. M., 2012, P IEEE 38 PHOT SPEC, P922
[7] Schroder D. K., 2005, Semiconductor material and device characterization
[8] Stellwag T. B., 1990, Conference Record of the Twenty First IEEE Photovoltaic Specialists Conference - 1990 (Cat. No.90CH2838-1), P442, DOI 10.1109/PVSC.1990.111663
[9] Direct-bonded GaAs/InGaAs tandem solar cell
Tanabe, Katsuaki
Morral, Anna Fontcuberta i
Atwater, Harry A.
Aiken, Daniel J.
Wanlass, Mark W.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (10)
[10] Tong Q., 1999, SEMICONDUCTOR WAFER

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