Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-ylnyAs epilayers on (001)GaAs by low pressure metalorganic chemical vapor deposition

被引：29

作者：

Wang, Qi ^{[1
]}

Ren, Xiaomin ^{[1
]}

Huang, Hui ^{[1
]}

Huang, Yongqing ^{[1
]}

Cai, Shiwei ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Key Lab Opt Commun & Lightwave Technol, Beijing 100876, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 01期

关键词：

Metalorganic chemical vapor deposition; Triethylboron; BGaAs; BAlAs; BGalnAs; MQW; BEAM EPITAXIAL-GROWTH; BGAAS; GAAS;

D O I：

10.1016/j.mejo.2008.06.066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality zinc-blende BxGa1-xAsxBx Al1-x-yInyAs and relevant MQW structures containing 10-period B-GAs/GaAs and BGalnAs/GaAs have been successfully grown oil exactly-oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimiethylaluminum, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase boron mole fraction. In this study, the maximum boron composition (x) of 5.8% ad 1.3% was achieved at the same growth temperature of 580 C for bulk BxGa1-xAs and BxAl1-xAs, respectively. 11 K phOtOlUminescence (PL) peak wavelength of lattice-matched B(x)Ga(1-x)ln(y)As epilayer with boron composition of about 4% reached 1.24 mu m. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：87 / 91

页数：5

共 12 条

[1] Growth and characterization of high quality BxGa1-xAs/GaAs(001) epilayers [J].