Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

被引：33
作者：
de Boer, W. D. A. M. [1 ]
McGonigle, C. [1 ]
Gregorkiewicz, T. [1 ]
Fujiwara, Y. [2 ]
Tanabe, S. [3 ]
Stallinga, P. [4 ]
机构：
[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1098 XH Amsterdam, Netherlands
[2] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Osaka, Japan
[3] Kyoto Univ, Grad Sch Human & Environm Studies, Kyoto, Japan
[4] Univ Algarve, FCT DEEI, P-8005139 Faro, Portugal
来源：
SCIENTIFIC REPORTS | 2014年 / 4卷
基金：
日本学术振兴会;
关键词：
EARTH-DOPED GAN; LIGHT-EMITTING DIODE; IONS; SITE;
D O I：
10.1038/srep05235
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (similar to 10%) and (similar to 3%) under continuous wave and pulsed excitation, respectively.
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页数：5
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