Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

被引：33

作者：

de Boer, W. D. A. M. ^{[1
]}

McGonigle, C. ^{[1
]}

Gregorkiewicz, T. ^{[1
]}

Fujiwara, Y. ^{[2
]}

Tanabe, S. ^{[3
]}

Stallinga, P. ^{[4
]}

机构：

[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1098 XH Amsterdam, Netherlands

[2] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Osaka, Japan

[3] Kyoto Univ, Grad Sch Human & Environm Studies, Kyoto, Japan

[4] Univ Algarve, FCT DEEI, P-8005139 Faro, Portugal

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

基金：

日本学术振兴会;

关键词：

EARTH-DOPED GAN; LIGHT-EMITTING DIODE; IONS; SITE;

D O I：

10.1038/srep05235

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (similar to 10%) and (similar to 3%) under continuous wave and pulsed excitation, respectively.

引用

页数：5

共 26 条

[1] An improved experimental determination of external photoluminescence quantum efficiency [J].

deMello, JC ;

Wittmann, HF ;

Friend, RH .

ADVANCED MATERIALS, 1997, 9 (03) :230-&

[2] SPECTRA OF EUROPIUM-DOPED YTTRIUM-OXIDE AND YTTRIUM VANADATE PHOSPHORS [J].

ELMANHARAWY, MS ;

EID, AH ;

ABDELKADER, A .

CZECHOSLOVAK JOURNAL OF PHYSICS, 1978, 28 (10) :1164-1173

[3]

Fernandez M. F., 2004, THESIS U AMSTERDAM, P110

[4] Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy [J].

Fleischman, Z. ;

Munasinghe, C. ;

Steckl, A. J. ;

Wakahara, A. ;

Zavada, J. ;

Dierolf, V. .

APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 97 (03) :607-618

[5] Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy [J].

Furukawa, Naoki ;

Nishikawa, Atsushi ;

Kawasaki, Takashi ;

Terai, Yoshikazu ;

Fujiwara, Yasufumi .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (02) :445-448

[6] Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy [J].

Lee, Dong-gun ;

Wakamatsu, Ryuta ;

Koizumi, Atsushi ;

Terai, Yoshikazu ;

Poplawsky, Jonathan D. ;

Dierolf, Volkmar ;

Fujiwara, Yasufumi .

APPLIED PHYSICS LETTERS, 2013, 102 (14)

[7] Eu luminescence center created by Mg codoping in Eu-doped GaN [J].

Lee, Dong-gun ;

Nishikawa, Atsushi ;

Terai, Yoshikazu ;

Fujiwara, Yasufumi .

APPLIED PHYSICS LETTERS, 2012, 100 (17)

[8] Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy [J].

Lorenz, K. ;

Alves, E. ;

Roqan, I. S. ;

O'Donnell, K. P. ;

Nishikawa, A. ;

Fujiwara, Y. ;

Bockowski, M. .

APPLIED PHYSICS LETTERS, 2010, 97 (11)

[9] Plasma synthesis and liquid-phase surface passivation of brightly luminescent Si nanocrystals [J].

Mangolini, L. ;

Jurbergs, D. ;

Rogojina, E. ;

Kortshagen, U. .

JOURNAL OF LUMINESCENCE, 2006, 121 (02) :327-334

[10] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy [J].

Nishikawa, A. ;

Furukawa, N. ;

Kawasaki, T. ;

Terai, Y. ;

Fujiwara, Y. .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

← 1 2 3 →