Synthesis of CuAlO2 from chemically precipitated nano-sized precursors

被引:12
作者
Akyildiz, Hasan [1 ]
机构
[1] Selcuk Univ, Dept Met & Mat Engn, TR-42075 Konya, Turkey
关键词
Mixing; Firing; Functional applications; CuAlO2; LOW-TEMPERATURE SYNTHESIS; TRANSPARENT THIN-FILMS; SOLID-STATE SYNTHESIS; THERMOELECTRIC PROPERTIES; DELAFOSSITE CUALO2; OPTOELECTRONIC PROPERTIES; CUPROUS DELAFOSSITES; NANOPARTICLES; DEPOSITION; STABILITY;
D O I
10.1016/j.ceramint.2015.07.031
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A study was carried out on the synthesis of CuAlO2 at temperatures below 1000 degrees C, using a simple approach based on mechanical mixing of chemically precipitated CuO and Al(OH)(3) nanoparticles. Synthesis of precursor powders was achieved at low temperatures (<100 degrees C) via precipitation from their corresponding aqueous solutions. After drying at room temperature, precursors were mixed in equimolar ratios by a combination of ball milling and sonication. Green pellets were obtained by filtration casting of the mixed powder slurry followed by dry compaction. X-ray diffraction study showed that the single phase CuAlO2 samples with high crystallinity formed only after 5 h of firing at 900 degrees C under flowing nitrogen. Electron microscopy images revealed a loosely packed microstructure with high surface area consisting of nanosized grains after the heat treatment. The achieved relative density was 45% of the theoretical density. The crystallite size was estimated to be 39 nm and the specific surface area of the sintered sample was measured as 9.67 m(2)/g. The bandgap was calculated as 3.07 eV with a transmittance of 60% in the visible region. The measured electrical conductivity was 4 x 10(-3) mS/cm at room temperature and showed an increase with increasing measurement temperature, which indicates semiconducting behavior. The conductivity was shown to increase by an order of magnitude with a higher degree of densification by sintering at 1150 degrees C. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:14108 / 14115
页数:8
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