ELDRS in Bipolar Linear Circuits: A Review

被引：126

作者：

Pease, Ronald L. ^{[1
]}

Schrimpf, Ronald D. ^{[2
]}

Fleetwood, Daniel M. ^{[2
]}

机构：

[1] RLP Res, Los Lunas, NM 87031 USA

[2] Vanderbilt Univ, Dept EECS, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 04期

关键词：

Accelerated testing; bipolar linear circuits; dose rate effects; enhanced low dose rate sensitivity; hardness assurance; low dose rate enhancement factor; total dose; LOW-DOSE-RATE; ELEVATED-TEMPERATURE IRRADIATION; INTERFACE-TRAP FORMATION; RATE SENSITIVITY ELDRS; INTEGRATED-CIRCUITS; PASSIVATION LAYERS; GAIN DEGRADATION; THERMAL-STRESS; PHYSICAL MODEL; MECHANISMS;

D O I：

10.1109/TNS.2008.2011485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar linear transistors was first identified in bipolar microcircuit transistors in 1991 and demonstrated in bipolar linear circuits in 1994. Since then it has been a major topic of research, characterization and analysis. Data compendia of low dose rate enhancement factors were presented in 1996, 2001 and 2008, identifying 30 unique widely used circuit types as susceptible to ELDRS. Early work on ELDRS was directed toward identifying mechanisms, characterizing circuits and developing hardness assurance methods, concentrating on accelerated testing techniques. More recently the research on ELDRS has focused on the effects of pre-irradiation elevated temperature stress (PETS), final passivation layers and molecular hydrogen in the package. This review paper provides an update on ELDRS in bipolar linear circuits, including the most recent results of mechanisms research, and the effects of post metallization processing on the total ionizing dose response.

引用

页码：1894 / 1908

页数：15

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