Development of DEPFET Macropixel detectors

被引：14

作者：

Zhang, Chen

Lechner, Peter

Lutz, Gerhard

Porro, Matteo

Richter, Rainer

Treis, Johannes

Strueder, Lothar

Zhang, Shuang Nan

机构：

[1] Max Planck Inst Halbleiterlabor, D-81739 Munich, Germany

[2] Max Planck Inst Extraterr Phys, D-85741 Garching, Germany

[3] Tsinghua Univ, Tsinghua Ctr Astrophys, Beijing 100084, Peoples R China

[4] PNSensor GmbH, D-80803 Munich, Germany

[5] Max Planck Inst Phys & Astrophys, D-80805 Munich, Germany

[6] Politecn Milan, Dept Elect, I-20133 Milan, Italy

[7] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China

[8] Chinese Acad Sci, Inst High Energy Phys, Key Lab Particle Astrophys, Beijing 100039, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 568卷 / 01期

基金：

中国国家自然科学基金;

关键词：

DEPFET; macropixel; silicon drift detector; X-ray astronomy; X-ray spectroscopy;

D O I：

10.1016/j.nima.2006.05.239

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors have been designed for X-ray applications and the prototypes with 1 x 1 mm(2) pixel size have been fabricated. The prototype applies a newly designed DEPFET structure with drain-clear-gate (DCG) as the readout element of a silicon drift detector. Therefore, the size of Macropixel detectors can be adjusted to match the requirement of the instrument on spatial resolution from about 50 x 50 mu m(2) to several square millimeters. The measured energy resolution for Mn-K-alpha peak at room temperature is 191 eV with a prototype single pixel. In this paper we present the DEPFET Macropixel detector concept as well as the static and dynamic test results. (c) 2006 Published by Elsevier B.V.

引用

页码：207 / 216

页数：10

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