54% PAE, 70-W X-Band GaN MMIC Power Amplifier With Individual Source via Structure

被引：20

作者：

Kamioka, Jun ^{[1
]}

Tarui, Yukinobu ^{[2
]}

Kamo, Yoshitaka ^{[3
]}

Shinjo, Shintaro ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol Res & Dev Ctr, Kamakura, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, Kamakura Works, Kamakura, Kanagawa, Japan

[3] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2020年 / 30卷 / 12期

关键词：

Gallium nitride; MMIC; power-added efficiency; power amplifiers; X-band;

D O I：

10.1109/LMWC.2020.3031273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on the development of an X-band GaN monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) which achieves a power-added efficiency (PAE) of 54% and an output power of 70 W. Mitsubishi's GaN field-effect transistors (FETs) with a gate length of 0.15 mu m and individual source via (ISV) structure are utilized. The developed GaN MMIC HPA demonstrates an output power of 46.1-47.4 dBm (41-56 W), a PAE of 49-55%, and a gain of 10.1-11.0 dB at the frequency range 8.5-10.5 GHz with a drain voltage of 30 V. Output power of 47.2-48.4 dBm (53-70 W), PAE of 52%-54%, and gain of 11.2-12.1 dB at the frequency of 8.5-10.5 GHz are obtained with a drain voltage of 35 V. The measured performances demonstrate the highest performance in terms of the combinations of output power and PAE compared to existing state-of-the-art X-band MMIC HPAs.

引用

页码：1149 / 1152

页数：4