Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates

被引：13

作者：

Kumagai, Yoshinao

Satoh, Fumitaka

Togashi, Rie

Murakami, Hisashi

Takemoto, Kikurou

Iihara, Junji

Yamaguchi, Koji

Koukitu, Akinori

机构：

[1] Tokyo Univ Agr & Technol, Inst Symbiot Sci & Technol, Strateg Res Initiat Future Nano Sci & Technol, Koganei, Tokyo 1848588, Japan

[2] Tokyo Univ Agr & Technol, Grad Sch Engn, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[3] Sumitomo Elect Ind Ltd, Osaka Works, Anal Technol Res Ctr, Konohana Ku, Osaka 5540024, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 296卷 / 01期

关键词：

doping; growth from vapor; hydride vapor-phase epitaxy; nitrides; semiconducting gallium compounds;

D O I：

10.1016/j.jcrysgro.2006.08.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An Fe-doped thick GaN layer was grown by hydride vapor-phase epitaxy on a (111)A GaAs starting substrate. By removing the GaAs substrate, a 400-mu m-thick (0001) GaN substrate having a smooth surface and an Fe concentration of 1.5 x 10(19) cm(-3) was obtained. X-ray diffraction rocking curves of the (0002) and (10 (1) over bar0) planes of the GaN substrate had narrow full-widths at half-maximum of 410 and 360 arcsec, respectively. The etch-pit density of the GaN substrate was 8 x 10(6) cm(-2). Extended X-ray absorption fine structure analysis revealed that the Fe atoms are substituting for the Ga in the GaN. The GaN substrate had a high resistivity of 8.8 x 10(12) Omega cm at room temperature. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：11 / 14

页数：4

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