Quantum Well Based on Graphene and Narrow-Gap Semiconductors

被引:1
作者
Ratnikov, P. V.
Silin, A. P.
机构
关键词
BOUNDARY-CONDITIONS; CARBON NANOTUBES; DIRAC-EQUATION; HETEROSTRUCTURES; STATES;
D O I
10.3103/S106833560902002X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The energy spectrum of a planar quantum well formed by two narrow-gap semiconductor strips with a graphene strip inserted between them was considered. It was shown that the gaplessmode arises only in the case of inverted narrow-gap semiconductors. Taking into account the graphene specificity, the spin splitting of the energy spectrum of the asymmetric quantum well was calculated. Interface states and optical transitions were studied. It was shown that optical transitions are possible only with parity conservation.
引用
收藏
页码:34 / 43
页数:10
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