Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes

被引：6

作者：

Jung, Se-Yeon ^{[1
]}

Seong, Tae-Yeon ^{[1
]}

Kim, Hyunsoo ^{[2
,3
]}

Park, Kyung-Soo ^{[4
]}

Park, Jae-Gwan ^{[4
]}

Namgoong, Gon ^{[5
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[2] Chonbuk Natl Univ, Dept Semicond & Chem Engn, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea

[4] Korea Inst Sci & Technol, Nanomat Res Ctr, Seoul 130650, South Korea

[5] Old Dominion Univ, Dept Elect & Comp Engn, Newport News, VA 23606 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 07期

关键词：

aluminium; annealing; electrical conductivity; elemental semiconductors; gallium compounds; III-V semiconductors; light emitting diodes; molecular beam epitaxial growth; ohmic contacts; passivation; photoluminescence; semiconductor-metal boundaries; silicon; titanium; wide band gap semiconductors; X-ray photoelectron spectra; CRYSTAL-POLARITY; SCHOTTKY DIODES; GAAS; SURFACE; MECHANISM;

D O I：

10.1149/1.3126529

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigate the electrical properties of Ti/Al ohmic contacts on (NH(4))(2)S(x)-passivated N-face n-GaN:Si (4.2x10(18) cm(-3)) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300 degrees C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.

引用

页码：H275 / H277

页数：3

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