Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

被引：6

作者：

Anderson, Travis ^{[1
]}

Koehler, Andrew ^{[1
]}

Hwang, Ya-Hsi ^{[2
]}

Hsieh, Yueh-Ling ^{[2
]}

Li, Shun ^{[2
]}

Ren, Fan ^{[2
]}

Johnson, Jerry Wayne ^{[3
]}

Pearton, Stephen J. ^{[4
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] IQE Inc, Taunton, MA 02780 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2014年 / 32卷 / 05期

关键词：

ALGAN/GAN HEMTS; OPERATION; GAN;

D O I：

10.1116/1.4891629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAlN/GaN high electron mobility transistors were irradiated from the front side with 340 keV protons to a dose of 5 x 10(13) cm(-2). Raman thermography showed that the irradiated devices had higher channel temperatures than unirradiated control devices, but only by similar to 10% under typical biasing conditions. Accordingly, the irradiated devices have higher thermal resistance (400 degrees C/W) compared to reference devices (350 degrees C/W), based on the slope of the power versus channel temperature line. However, increases of 42% in off-state drain breakdown voltage (V-BR) and of >92% in critical voltage (V-cri) were observed for the proton irradiated HEMT. This is ascribed to the reduction of the peak electric field at the gate edges by similar to 50% through the introduction of negative trap charges created from vacancies generated by the proton irradiation. (C) 2014 American Vacuum Society.

引用

页数：5

共 28 条

[1] Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography [J].