Non-inverted electron-hole alignment in InAs/InP self-assembled quantum dots

被引：3

作者：

Reimer, M. E. ^{[1
,2
]}

Dalacu, D. ^{[1
]}

Lapointe, J. ^{[1
]}

Poole, P. J. ^{[1
]}

McKinnon, W. R. ^{[1
]}

Williams, R. L. ^{[1
,2
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期

关键词：

SINGLE;

D O I：

10.1002/pssb.200880642

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence from individual InAs/InP quantum dots embedded within a planar n-i structure is studied as a function of vertical electric field. We demonstrate control of the electron number and determine the Stark shift and built-in dipole at zero electric field, In contrast to the well studied InAs/GaAs quantum dot material system, we obtain a built-in dipole which indicates that the electron lies above the hole at zero electric field. The magnitude and direction of the measured dipole suggests a uniform quantum dot composition. The gating principles we demonstrate can be applied to pre-positioned InAs/InP quantum dots, such that arrays of initialized single spins can be employed for quantum information applications. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：828 / 831

页数：4

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