Influence of AIN layers on the interface stability of HfO2 gate dielectric stacks

被引：22

作者：

Agustin, Melody P. ^{[1
]}

Alshareef, Husam

Quevedo-Lopez, Manuel A.

Stemmer, Susanne

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

关键词：

ENERGY-LOSS SPECTROSCOPY; ALUMINUM NITRIDE; ALN;

D O I：

10.1063/1.2236264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of thick (similar to 10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO2 dielectrics was investigated. Annealing caused a reduction of the interfacial SiO2 at the Si interface. At high temperatures (similar to 1000 degrees C) a silicide reaction was observed at the HfO2/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO2, and the consequences for the electrical properties are discussed. (c) 2006 American Institute of Physics.

引用

页数：3

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