Oxygen precipitation in Si:O annealed under high hydrostatic pressure

被引：7

作者：

Misiuk, A

Bak-Misiuk, J

Bryja, L

Katcki, J

Ratajczak, J

Jun, J

Surma, B

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Wroclaw Univ Technol, PL-53370 Wroclaw, Poland

[4] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[5] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2002年 / 101卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.101.719

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O+ dose, D, within the 6 x 10(17)-2 x 10(18) cm(-2) range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D = 6 x 10(17) cm(-2)). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.

引用

页码：719 / 727

页数：9

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