Microwave plasma generated in a narrow gap to achieve high power efficiency during diamond growth

被引:6
作者
Yamada, Hideaki [1 ]
Chayahara, Akiyoshi [1 ]
Mokuno, Yoshiaki [1 ]
Shikata, Shin-ichi [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Osaka 5638577, Japan
关键词
Microwave plasma CVD; Diamond; Simulation; RATE HOMOEPITAXIAL GROWTH; CHEMICAL-VAPOR-DEPOSITION; ASSISTED CVD REACTOR; NITROGEN ADDITION; SIMULATION; SURFACE; AREA; SUBSTRATE; PRESSURE; DESIGN;
D O I
10.1016/j.diamond.2008.10.038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single crystal diamonds were synthesized using a conventional configuration and a proposed configuration of reactors for microwave plasma chemical vapor deposition. The distributions of growth rate and substrate temperature were compared. Using relatively high gas pressure and moderate microwave input power the proposed configuration gave improved distributions. Secondary ion mass spectroscopy analysis did not indicate inclusion of metals which compose the boundaries of the discharge region of the proposed configuration. The power efficiency was estimated by the growth rate and the input power. Comparison with other systems implies that the proposed configuration gives similar or improved power efficiency. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:117 / 120
页数:4
相关论文
共 24 条
  • [1] ARIYADA O, 2006, Patent No. 2006083405
  • [2] A NOVEL TECHNIQUE FOR DIAMOND FILM DEPOSITION USING SURFACE-WAVE DISCHARGES
    BORGES, CFM
    MOISAN, M
    GICQUEL, A
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (02) : 149 - 154
  • [3] The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD
    Chayahara, A
    Mokuno, Y
    Horino, Y
    Takasu, Y
    Kato, H
    Yoshikawa, H
    Fujimori, N
    [J]. DIAMOND AND RELATED MATERIALS, 2004, 13 (11-12) : 1954 - 1958
  • [4] Simulation and development of optimized microwave plasma reactors for diamond deposition
    Füner, M
    Wild, C
    Koidl, P
    [J]. SURFACE & COATINGS TECHNOLOGY, 1999, 116 : 853 - 862
  • [5] Numerical simulation of microwave field distribution for bifocal plasma sources
    Graf, M
    Räuchle, E
    Urban, H
    Kaiser, M
    Alberts, L
    Emmerich, R
    Elsner, P
    [J]. SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4) : 904 - 908
  • [6] Ellipsometric monitoring of first stages of diamond nucleation in a bias-enhanced surface-wave-excited microwave plasma
    Hayashi, Y
    Nakamura, H
    Nagahiro, M
    Nishino, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (7B): : 4508 - 4511
  • [7] DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA
    KAMO, M
    SATO, Y
    MATSUMOTO, S
    SETAKA, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 642 - 644
  • [8] Determination of metallic impurities in high-purity type IIa diamond grown by high-pressure and high-temperature synthesis using neutron activation analysis
    Kaneko, J
    Yonezawa, C
    Kasugai, Y
    Sumiya, H
    Nishitani, T
    [J]. DIAMOND AND RELATED MATERIALS, 2000, 9 (12) : 2019 - 2023
  • [9] Control of plasma space potentials and chemical vapor deposition of nanocrystalline diamond films in surface-wave excited low-pressure plasmas
    Kim, Jaeho
    Katsurai, Makoto
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
  • [10] Scaling the microwave plasma-assisted chemical vapor diamond deposition process to 150-200 mm substrates
    King, D.
    Yaran, M. K.
    Schuelke, T.
    Grotjohn, T. A.
    Reinhard, D. K.
    Asmussen, J.
    [J]. DIAMOND AND RELATED MATERIALS, 2008, 17 (4-5) : 520 - 524