In situ hydrostatic pressure induced improvement of critical current density and suppression of magnetic relaxation in Y(Dy0.5)Ba2Cu3O7-δ coated conductors

被引:0
|
作者
Sang, Lina [1 ,2 ]
Gutierrez, Joffre [2 ]
Cai, Chuanbing [1 ]
Dou, Shixue [2 ]
Wang, Xiaolin [2 ,3 ]
机构
[1] Shanghai Univ, Phys Dept, Shanghai Key Lab High Temp Superconductors, Shanghai 200444, Peoples R China
[2] Univ Wollongong, Fac Engn, Australian Inst Innovat Mat, Inst Superconducting & Elect Mat, Wollongong, NSW 2500, Australia
[3] Univ Wollongong, ARC Ctr Excellence Future Low Energy Elect Techno, Wollongong, NSW, Australia
基金
欧盟地平线“2020”; 澳大利亚研究理事会; 中国国家自然科学基金;
关键词
magnetic relaxation; critical current density; vortex pinning; metal organic deposition; BA-CU-O; PINNING MECHANISM; GRAIN-BOUNDARIES; DEPENDENCE; DEFECTS;
D O I
10.1088/1361-6668/aac121
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the effect of in situ hydrostatic pressure on the enhancement of the in-magneticfield critical current density parallel to the crystallographic c-axis and vortex pinning in epitaxial Y(Dy-0.5)Ba2Cu3O7-delta coated conductors prepared by metal organic deposition. Our results show that in situ hydrostatic pressure greatly enhances the critical current density at high fields and high temperatures. At 80 K and 5 T we observe a ten-fold increase in the critical current density under the pressure of 1.2 GPa, and the irreversibility line is shifted to higher fields without changing the critical temperature. The normalized magnetic relaxation rate shows that vortex creep rates are strongly suppressed due to applied pressure, and the pinning energy is significantly increased based on the collective creep theory. After releasing the pressure, we recover the original superconducting properties. Therefore, we speculate that the in situ hydrostatic pressure exerted on the coated conductor enhances the pinning of existing extended defects. This is totally different from what has been observed in REBa2Cu3O7-delta melt-textured crystals, where the effect of pressure generates point-like defects.
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页数:7
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