InMnN: a nitride-based diluted magnetic semiconductor

被引：13

作者：

Chen, PP ^{[1
]}

Makino, H ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aboba Ku, Sendai, Miyagi 9808577, Japan

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 1-2期

关键词：

magnetic materials; nitrides; molecular beam epitaxy;

D O I：

10.1016/j.ssc.2004.01.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

New nitride-based diluted magnetic semiconductor In1-xMnxN films were grown on Al2O3 Substrate at low temperature (200degreesC) by RF-plasma-assisted molecular beam epitaxy. Both X-ray diffraction and atomic force microscope indicate that Mn can be homogeneously incorporated into InN up to 10%. The bandgap of In1-xMnxN decreases with increasing Mn concentration. Magnetization measurements indicate that the ln(1-x)Mn(x)N films with low Mn content x = 0.04 displayed a clear paramagnetic behavior down to 1.7 K, whereas a paramagnetic to spin-glass transition was observed for the samples with x = 0.1 at about 3 K. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：25 / 29

页数：5

共 15 条

[1] Ensemble Monte Carlo study of electron transport in wurtzite InN [J].

Bellotti, E ;

Doshi, BK ;

Brennan, KF ;

Albrecht, JD ;

Ruden, PP .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :916-923

[2] SPIN-GLASSES - EXPERIMENTAL FACTS, THEORETICAL CONCEPTS, AND OPEN QUESTIONS [J].

BINDER, K ;

YOUNG, AP .

REVIEWS OF MODERN PHYSICS, 1986, 58 (04) :801-976

[3] MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties [J].

Chen, PP ;

Makino, H ;

Kim, JJ ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :331-336

[4] Observation of spin-glass behavior in homogeneous (Ga,Mn)N layers grown by reactive molecular-beam epitaxy [J].

Dhar, S ;

Brandt, O ;

Trampert, A ;

Friedland, KJ ;

Sun, YJ ;

Ploog, KH .

PHYSICAL REVIEW B, 2003, 67 (16)

[5] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[6] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[7] DILUTED MAGNETIC SEMICONDUCTORS [J].

FURDYNA, JK .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :R29-R64

[8] Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors [J].

Kuwabara, S ;

Kondo, T ;

Chikyow, T ;

Ahmet, P ;

Munekata, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (7B) :L724-L727

[9] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852

[10] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

← 1 2 →