Increasing compositional backscattered electron contrast in scanning electron microscopy

被引：13

作者：

Timischl, F. ^{[1
]}

Inoue, N. ^{[2
]}

机构：

[1] JEOL Tech Ltd, 2-6-38 Musashino, Akishima, Tokyo 1960021, Japan

[2] JEOL Ltd, 3-1-2 Musashino, Akishima, Tokyo 1968558, Japan

来源：

ULTRAMICROSCOPY | 2018年 / 186卷

关键词：

Scanning electron microscopy; Backscattered electron image; Material contrast; Compositional contrast; Topography; DETECTORS; IMAGES; ANGLES; LVSEM;

D O I：

10.1016/j.ultramic.2017.12.001

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

A method for increasing compositional or material contrast of a standard semiconductor BSE detector in a scanning electron microscope (SEM) by compensation of the topographic contrast component is proposed. Compensation is based on the physical properties of backscattered electron emission and topography information of the specimen's surface. Three analytical and semi-empirical compensation algorithms employing different physical models and approximations are implemented and compared to conventional BSE signals to show the effectivity of the proposed compensation approach. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：82 / 93

页数：12

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