Effect of hot-wire passivation on the properties of hydrogenated microcrystalline silicon films to reduce post-deposition oxidation

被引：2

作者：

Mitsuhashi, S. ^{[1
]}

Tabata, A. ^{[1
]}

Mizutani, T. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 28-29期

关键词：

silicon; oxidation reduction; chemical vapor deposition; microcrystallinity; FT-IR measurements;

D O I：

10.1016/j.jnoncrysol.2006.04.020

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated microcrystalline silicon (mu c-Si:H) films have a large number of grain boundaries that oxidize after deposition, leading to deterioration of device performance. In this study, post-treatment of pc-Si:H thin films was carried out with methane-related radicals generated by a hot wire. The effect of the hot-wire passivation on the properties of the mu c-Si:H thin films was investigated using Fourier-transform infrared (FT-IR) transmission spectroscopy. Through post-treatment, hydrogen on the silicon-crystallite surface was substituted with hydrocarbon. Further, an increase in filament temperature (T-ft) was found to enhance passivation. For films treated at T-ft above 1700 degrees C, post-oxidation and nitridation hardly occurred, whereas films treated at T-ft below 1400 degrees C were oxidized and nitrided even after post-treatment. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2943 / 2946

页数：4