Effect of hot-wire passivation on the properties of hydrogenated microcrystalline silicon films to reduce post-deposition oxidation

被引：2

作者：

Mitsuhashi, S. ^{[1
]}

Tabata, A. ^{[1
]}

Mizutani, T. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 28-29期

关键词：

silicon; oxidation reduction; chemical vapor deposition; microcrystallinity; FT-IR measurements;

D O I：

10.1016/j.jnoncrysol.2006.04.020

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated microcrystalline silicon (mu c-Si:H) films have a large number of grain boundaries that oxidize after deposition, leading to deterioration of device performance. In this study, post-treatment of pc-Si:H thin films was carried out with methane-related radicals generated by a hot wire. The effect of the hot-wire passivation on the properties of the mu c-Si:H thin films was investigated using Fourier-transform infrared (FT-IR) transmission spectroscopy. Through post-treatment, hydrogen on the silicon-crystallite surface was substituted with hydrocarbon. Further, an increase in filament temperature (T-ft) was found to enhance passivation. For films treated at T-ft above 1700 degrees C, post-oxidation and nitridation hardly occurred, whereas films treated at T-ft below 1400 degrees C were oxidized and nitrided even after post-treatment. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2943 / 2946

页数：4

共 20 条

[1] MICROSTRUCTURE AND THE LIGHT-INDUCED METASTABILITY IN HYDROGENATED AMORPHOUS-SILICON [J].

BHATTACHARYA, E ;

MAHAN, AH .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1587-1589

[2]

*CHEM SOC JAP, 1984, CHEM HDB, P582

[3] Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition [J].

Daimaru, T ;

Tabata, A ;

Mizutani, T .

THIN SOLID FILMS, 2006, 501 (1-2) :102-106

[4] HYDROGEN CONTENT OF AMORPHOUS SILICON-CARBIDE PREPARED BY REACTIVE SPUTTERING - EFFECTS ON FILMS PROPERTIES [J].

GUIVARCH, A ;

RICHARD, J ;

LECONTELLEC, M ;

LIGEON, E ;

FONTENILLE, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2167-2174

[5] PROPERTIES OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED A-SINX-H BY VARIOUS DILUTION GASES [J].

HSIEH, SW ;

CHANG, CY ;

LEE, YS ;

LIN, CW ;

HSU, SC .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) :3645-3655

[6] Key issues for fabrication of high quality amorphous and micro crystalline silicon solar cells [J].

Kondo, M ;

Matsui, T ;

Nasuno, Y ;

Sonobe, H ;

Shimizu, S .

THIN SOLID FILMS, 2006, 501 (1-2) :243-246

[7] Amorphous silicon nitride deposited by hot-wire chemical vapor deposition [J].

Liu, FZ ;

Ward, S ;

Gedvilas, L ;

Keyes, B ;

To, B ;

Wang, Q ;

Sanchez, E ;

Wang, SL .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2973-2979

[8] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J].

LUCOVSKY, G .

SOLID STATE COMMUNICATIONS, 1979, 29 (08) :571-576

[9] Hot wire chemical vapor deposition of Si containing materials for solar cells [J].

Mahan, AH .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) :299-327

[10] COMPLETE MICROCRYSTALLINE P-I-N SOLAR-CELL - CRYSTALLINE OR AMORPHOUS CELL BEHAVIOR [J].

MEIER, J ;

FLUCKIGER, R ;

KEPPNER, H ;

SHAH, A .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :860-862

← 1 2 →