Influence of N interstitials on the electronic properties of GaAsN alloys

被引：26

作者：

Jin, Y. ^{[1
,2
]}

Jock, R. M. ^{[1
,2
]}

Cheng, H. ^{[2
]}

He, Y. ^{[3
]}

Mintarov, A. M. ^{[3
]}

Wang, Y. ^{[4
]}

Kurdak, C. ^{[2
]}

Merz, J. L. ^{[3
]}

Goldman, R. S. ^{[1
,2
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[3] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[4] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 06期

基金：

美国国家科学基金会;

关键词：

carrier density; carrier mobility; conduction bands; gallium arsenide; gallium compounds; III-V semiconductors; impurity states; interstitials; nuclear chemical analysis; Raman spectra; rapid thermal annealing; semiconductor thin films; wide band gap semiconductors; NITROGEN INCORPORATION; GA(AS; N); LAYERS; TEMPERATURE;

D O I：

10.1063/1.3187915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used rapid thermal annealing to investigate the influence of N interstitials on the electronic properties of GaAsN alloys. Nuclear reaction analysis reveals an annealing-induced decrease in the interstitial N concentration, while the total N composition remains constant. Corresponding signatures for the reduced interstitial N concentration are apparent in Raman spectra. Following annealing, both the room-T carrier concentration, n, and the mobility increase. At higher measurement-Ts, a thermally activated increase in n suggests the presence of a trap near GaAsN conduction band edge with activation energy 85 +/- 15 meV. The annealing-induced increase in n suggests the association of the trap with interstitial N.

引用

页数：3

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