Ultra-low-power temperature compensated voltage reference generator

被引：18

作者：

De Vita, Giuseppe ^{[1
]}

Iannaccone, Giuseppe ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Eletrron Informat Tele, I-56122 Pisa, Italy

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 10期

关键词：

CMOS voltage reference; temperature coefficient; low power;

D O I：

10.1016/j.mejo.2006.04.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS voltage reference generator, based on the difference between the gate-source voltages of two NMOS transistors, has been implemented with AMS 0.35 mu m CMOS technology (V-thn = 0.45 and V-thp = 0.75 V at 0 degrees C). The minimum and maximum supply voltages that ensure the correct operation of the reference voltage generator, are 1.5 and 4.3 V, respectively. The supply current at the maximum supply voltage and at 80 degrees C is 2.4 mu A. A temperature coefficient of 25 ppm/degrees C and a line sensitivity of 1.6 mV/V are achieved. The power supply rejection ratios without any filtering capacitor at 100 Hz and 10 MHz are larger than -74 and -59 dB, respectively. The occupied chip area is 0.08 mm(2). (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1072 / 1079

页数：8

共 11 条

[1] A CMOS bandgap reference circuit with sub-1-V operation [J].

Banba, H ;

Shiga, H ;

Umezawa, A ;

Miyaba, T ;

Tanzawa, T ;

Atsumi, S ;

Sakui, K .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (05) :670-674

[2] NEW NMOS TEMPERATURE-STABLE VOLTAGE REFERENCE [J].

BLAUSCHILD, RA ;

MULLER, RS ;

MEYER, RG ;

TUCCI, PA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (06) :767-774

[3]

Leung K.N., 2002, US Patent, Patent No. [6 441 680, 6441680]

[4] A CMOS voltage reference based on weighted ΔVGS for CMOS low-dropout linear regulators [J].

Leung, KN ;

Mok, PKT .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (01) :146-150

[5]

Leung KN, 2002, IEEE J SOLID-ST CIRC, V37, P526, DOI 10.1109/4.991391

[6] MOS VOLTAGE REFERENCE BASED ON POLYSILICON GATE WORK FUNCTION DIFFERENCE [J].

OGUEY, HJ ;

GERBER, B .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) :264-269

[7]

Song B.S., 1982, IEEE J SOLID-ST CIRC, V17, P291, DOI [10.1109/JSSC.1982.1051731, DOI 10.1109/T-ED.1982.20759]

[8] A PRECISION CURVATURE-COMPENSATED CMOS BANDGAP REFERENCE [J].

SONG, BS ;

GRAY, PR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (06) :634-643

[9] A TEMPERATURE-STABILIZED SOI VOLTAGE REFERENCE BASED ON THRESHOLD VOLTAGE DIFFERENCE BETWEEN ENHANCEMENT AND DEPLETION NMOSFETS [J].

SONG, HJ ;

KIM, CK .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (06) :671-677

[10] SUB-1-MU-A DYNAMIC REFERENCE VOLTAGE GENERATOR FOR BATTERY-OPERATED DRAMS [J].

TANAKA, H ;

NAKAGOME, Y ;

ETOH, J ;

YAMASAKI, E ;

AOKI, M ;

MIYAZAWA, K .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (04) :448-453

← 1 2 →