Edge and surface states in the quantum Hall effect in graphene

被引:132
作者
Castro Neto, A. H.
Guinea, F.
Peres, N. M. R.
机构
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
[2] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal
[3] Univ Minho, Dept Phys, P-4710057 Braga, Portugal
[4] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 2006年 / 73卷 / 20期
关键词
D O I
10.1103/PhysRevB.73.205408
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge states (generated by the magnetic field) and Anderson-localized surface states (created by the presence of zig-zag edges) lead to edge reconstruction. As a consequence, the point contact tunneling on a graphene edge has a nonuniversal tunneling exponent, and the Hall conductivity is not perfectly quantized in units of e(2)/h. We argue that the magnetotransport properties of graphene depend strongly on the strength of electron-electron interactions, the amount of disorder, and the details of the edges.
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页数:8
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