Threshold current density analysis of highly strained GaInNAs multiple quantum well lasers grown by metalorganic chemical vapor deposition

被引：4

作者：

Jikutani, N ^{[1
]}

Sato, S ^{[1
]}

Takahashi, T ^{[1
]}

Itoh, A ^{[1
]}

Kaminishi, M ^{[1
]}

Satoh, S ^{[1
]}

机构：

[1] Ricoh Co Ltd, Ctr Res & Dev, Natori, Miyagi 9811241, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 2B期

关键词：

GaInNAs; highly strained; QW; MQW; laser; VCSEL; MOCVD;

D O I：

10.1143/JJAP.41.1164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly strained GaInAs/GaAs quantum wells (QWs) [single quantum well (SQW), double quantum well (DQW) and triple quantum well (TQW)] are grown by metalorganic chemical vapor deposition (MOCVD), and GaInNAs/GaAs lasers (SQW and TQW) are fabricated with different numbers of wells to investigate their characteristics. The low threshold current density of 541 A/cm(2) and the lasing wavelengthof 1.276 mum are obtained by the SQW laser with cavity length of 2070 mum, The threshold current density of 1.41 kA/cm(2) and the lasing wavelength of 1.296 mum are obtained by the TQW laser with cavity length of 1140 mum under pulsed operation at room temperature. From the threshold current density analysis, it is evident that their crystal growth and fabrication are successful. The threshold current density of the vertical cavity surface-emitting laser (VCSEL) is also discussed.

引用

页码：1164 / 1167

页数：4

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