p-type semi-transparent conductive NiO films with high deposition rate produced by superimposed high power impulse magnetron sputtering

被引：12
作者：
Chuang, Tung-Han [1 ]
Wen, Chao-Kuang [1 ]
Chen, Sheng-Chi [2 ,3 ,4 ,5 ]
Liao, Ming-Han [6 ]
Liu, Fen [7 ]
Sun, Hui [7 ]
机构：
[1] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan
[2] Ming Chi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan
[3] Ming Chi Univ Technol, Ctr Plasma & Thin Film Technol, Taipei 243, Taiwan
[4] Chang Gung Univ, Coll Engn, Taoyuan 333, Taiwan
[5] Chang Gung Univ, Ctr Green Technol, Taoyuan 333, Taiwan
[6] Natl Taiwan Univ, Dept Mech Engn, Taipei 106, Taiwan
[7] Shandong Univ, Sch Space Sci & Phys, Shandong Key Lab Opt Astron & Solar Terr Environm, Weihai 264209, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2020年 / 46卷 / 17期
关键词：
p-type NiO films; Superimposed HiPIMS; Deposition rate; Ionization rate; OXYGEN PARTIAL-PRESSURE; THIN-FILMS; OPTICAL-PROPERTIES; NICKEL-OXIDE; TRANSPARENT; FREQUENCY; TEMPERATURE;
D O I：
10.1016/j.ceramint.2020.07.267
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
High power impulse magnetron sputtering (HiPIMS) technology with extremely high target ionization rate is employed to deposit Ni3+-rich NiO films with enhanced p-type conductivity. However, the HiPIMS technique possesses a significant disadvantage; that is, its low deposition rate. In order to overcome this drawback, superimposed HiPIMS (HiPIMS+MF) power supply was employed in this work. The influence of the MF pulse duration on the films' composition, morphology, chemical status, structure and optoelectronic properties is investigated here. The results show that compared with pure HiPIMS deposition, the deposition rate of superimposed HiPIMS technology is significantly improved. Meanwhile, the advantages of HiPIMS with high ionization rates are retained. Ni3+-rich NiO films are produced using superimposed HiPIMS deposition. Especially in HiPIMS+MF 3X deposition mode, a relatively low resistivity of 3.41 Omega cm with high deposition rate (2.32 angstrom/s) is realized.
引用
收藏
页码：27695 / 27701
页数：7
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