Topological metal-insulator transition in narrow graphene nanoribbons?

被引:10
作者
Zdetsis, Aristides D. [1 ,2 ]
Economou, E. N. [2 ]
机构
[1] Univ Patras, Dept Phys, Mol Engn Lab, GR-26500 Patras, Greece
[2] Univ Crete, Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Dept Phys, POB 1385, GR-71110 Patras, Greece
关键词
Graphene; Graphene nanoribbons; Aromaticity; Phase transition; Edge states; Topological end-states; ON-SURFACE SYNTHESIS; ELECTRONIC-STRUCTURE; AROMATICITY;
D O I
10.1016/j.carbon.2021.02.004
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We show that very narrow armchair graphene nanoribbons of length L and width of 2 zigzag-rings undergo a metal-insulator-like transition at a critical length L-c approximate to 10 nm, where the energy gap drops rather abruptly and topological "end" states appear, linked to dramatically transformed aromaticity. At L-c the conductivity, estimated through an invoked computational scheme, also rises almost discontinuously to a value near the nominal minimum conductivity of graphene sigma(min) = 4 e(2)/h. The end states (at the zigzag edges) generate sharp peaks in the density of states around the Fermi level at the Dirac points, coinciding with charge-neutrality points, associated with sigma(min). This suggests metallic-like behaviour, which however is an uncommon combination of interrelated "short-long", (or "bulk"-"edge") topological-aromatic transition(s) due to strong quantum confinement, combined with inversion symmetry conflict. This "multi-transition" is rather universal occurring also for wider AGNRs but for a much smaller L-c and in a less sharp way. The assumed lower total energy of such open states is an artefact of the mean-field treatment of the electron-electron interaction. In contrast, the topological "end" states reported here are unique and not spin, but rather pseudospin polarized. Thus, any observed magnetism should be considered non-conventional or of questionable origin. (C) 2021 Elsevier Ltd. All rights reserved.
引用
收藏
页码:548 / 557
页数:10
相关论文
共 50 条
  • [41] Metal-insulator transition switching in VOx-VSe2 heterojunctions
    Sahdan, Muhammad Fauzi
    Arramel
    Xiaodai, Sharon Lim
    Wang, Hong
    Birowosuto, Muhammad Danang
    Haur, Sow Chorng
    Ang, Kah-Wee
    Wee, Andrew Thye Shen
    PHYSICAL REVIEW MATERIALS, 2022, 6 (01):
  • [42] Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition
    Heo, Jinseong
    Jeong, Heejeong
    Cho, Yeonchoo
    Lee, Jaeho
    Lee, Kiyoung
    Nam, Seunggeol
    Lee, Eun-Kyu
    Lee, Sangyeob
    Lee, Hyangsook
    Hwang, Sungwoo
    Park, Seongjun
    NANO LETTERS, 2016, 16 (11) : 6746 - 6754
  • [43] Modeling of the hysteretic metal-insulator transition in a vanadium dioxide infrared detector
    de Almeida, LAL
    Deep, GS
    Lima, AMN
    Neff, H
    OPTICAL ENGINEERING, 2002, 41 (10) : 2582 - 2588
  • [44] Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy
    Aetukuri, Nagaphani B.
    Gray, Alexander X.
    Drouard, Marc
    Cossale, Matteo
    Gao, Li
    Reid, Alexander H.
    Kukreja, Roopali
    Ohldag, Hendrik
    Jenkins, Catherine A.
    Arenholz, Elke
    Roche, Kevin P.
    Duerr, Hermann A.
    Samant, Mahesh G.
    Parkin, Stuart S. P.
    NATURE PHYSICS, 2013, 9 (10) : 661 - 666
  • [45] A plasmonic switch using metal-insulator transition in VO2
    Dwivedi, Ram Prakash
    Sharma, Divya
    Lee, Chongmu
    Vaidya, Tanvi
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2016, 18 (3-4): : 207 - 212
  • [46] Harnessing the Metal-Insulator Transition of VO2 in Neuromorphic Computing
    Schofield, Parker
    Bradicich, Adelaide
    Gurrola, Rebeca M.
    Zhang, Yuwei
    Brown, Timothy D.
    Pharr, Matt
    Shamberger, Patrick J.
    Banerjee, Sarbajit
    ADVANCED MATERIALS, 2023, 35 (37)
  • [47] Ag rearrangement induced metal-insulator phase transition in thermoelectric MgAgSb
    Zhang, Zhou
    Zhu, Yifan
    Ji, Jialin
    Zhang, Jianxin
    Luo, Huifang
    Fu, Chenguang
    Li, Qianqian
    Brod, Madison
    Snyder, G. Jeffrey
    Zhang, Yubo
    Yang, Jiong
    Zhang, Wenqing
    MATERIALS TODAY PHYSICS, 2022, 25
  • [48] Metal-insulator transition induced in CaVO3 thin films
    Gu, Man
    Laverock, Jude
    Chen, Bo
    Smith, Kevin E.
    Wolf, Stuart A.
    Lu, Jiwei
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (13)
  • [49] Oxygen vacancy induced metal-insulator transition in LaNiO3
    Misra, Debolina
    Kundu, Tarun Kumar
    EUROPEAN PHYSICAL JOURNAL B, 2016, 89 (01) : 1 - 8
  • [50] On Computation and Analysis of Entropy Measures for Metal-Insulator Transition Super Lattice
    Zhao, Xuemei
    Siddiqui, Muhammad Kamran
    Manzoor, Shazia
    Ahmad, Sarfraz
    Muhammad, Mehwish Hussain
    Liu, Jia-Bao
    IETE JOURNAL OF RESEARCH, 2024, 70 (02) : 1911 - 1922