Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions

被引：28

作者：

Rowlands, G. E. ^{[1
]}

Aradhya, S. V. ^{[1
]}

Shi, S. ^{[1
]}

Yandel, E. H. ^{[1
]}

Oh, J. ^{[1
]}

Ralph, D. C. ^{[1
,2
]}

Buhrman, R. A. ^{[1
]}

机构：

[1] Cornell Univ, Ithaca, NY 14853 USA

[2] Kavli Inst Cornell, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 12期

关键词：

TRANSFER-TORQUE; DRIVEN; TECHNOLOGY; REVERSAL; PILLARS;

D O I：

10.1063/1.4978661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and that the short-pulse energy efficiency can be substantially enhanced by spatial non-uniformity in the initial magnetization of the magnetic free layer. The sign of the Oersted field is essential for this enhancement-in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs. Published by AIP Publishing.

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页数：5

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