Ir/Ni/W/Ni Ohmic contacts for n-type 3C-SiC grown on p-type silicon substrate

被引：0

作者：

Li, Ru-Quan ^{[1
,2
]}

Guo, Jun-Mei ^{[2
]}

Wen, Ming ^{[2
]}

Zhou, Xiao-Long ^{[1
]}

Guan, Wei-Ming ^{[2
]}

Wang, Chuan-Jun ^{[1
,2
,3
]}

机构：

[1] Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Kunming 650093, Yunnan, Peoples R China

[2] Sino Platinum Met Co Ltd, State Key Lab Adv Technol Comprehens Utilizat Pla, Kunming 650106, Yunnan, Peoples R China

[3] Keji Rd, Kunming 650106, Yunnan, Peoples R China

来源：

MATERIALS RESEARCH EXPRESS | 2021年 / 8卷 / 02期

关键词：

ohmic contacts; Ir; Ni; W; specific contact resistance; thermal stability; NICKEL; THICKNESS;

D O I：

10.1088/2053-1591/abdf76

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, Ohmic contacts to n-type 3C-SiC grown on p-type Si substrate employing Ni layer and Ir/Ni/W/Ni multilayers were investigated. Specific contact resistances of 2.57 x 10(-4) omega cm(2) and 2.74 x 10(-5) omega cm(2) were achieved with Ni layer and Ir/Ni/W/Ni multilayers, respectively, at an annealing temperature of 1050 degrees C. Samples were characterized using XRD, AFM and SEM. The result indicates the W is effective as a carbon absorbing and stabilizing layer and the presence of Ir cap layer facilitates lowering the surface roughness. As a result, the thermal stability and contact surface morphology of Ir/Ni/W/Ni/3C-SiC is greatly improved compared with Ni/SiC contact.

引用

页数：11

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