Microscopic analysis of extreme nonlinear optics in semiconductor nanostructures

被引:48
作者
Golde, Daniel
Meier, Torsten
Koch, Stephan W.
机构
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
关键词
D O I
10.1364/JOSAB.23.002559
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A microscopic analysis is presented for the extreme nonlinear optical response of semiconductor quantum wells and wires after intense excitation with femtosecond laser pulses. In this regime, the light-matter interaction is the dominant eneregy scale, leading to a number of interesting effects such as carrier-wave Rabi flopping, Mellow splitting, and the creation of higher harmonies. The results presented here were obtained by evaluating the semiconductor Bloch equations without the rotating wave approximation. The electronic dispersion of semiconductor nanostructures is shown to have a characteristic influence on the extreme nonlinear optical response, whereas the relative importance of the carrier Coulomb interaction decreases with increasing excitation intensities. (c) 2006 Optical Society of America.
引用
收藏
页码:2559 / 2565
页数:7
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