Thermal stability of the Al2O3 passivation on p-type silicon surfaces for solar cell applications

被引：103

作者：

Benick, Jan ^{[1
]}

Richter, Armin ^{[1
]}

Hermle, Martin ^{[1
]}

Glunz, Stefan W. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2009年 / 3卷 / 7-8期

关键词：

RECOMBINATION; LIFETIME;

D O I：

10.1002/pssr.200903209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al2O3 has been shown to provide an outstanding passivation quality on p-type surfaces after annealing at moderate temperatures (similar to 425 degrees C). However, most industrial silicon solar cells are based on printing technologies for metallization, including a high temperature firing step for the contact formation. To investigate the thermal stability of the Al2O3 passivation, symmetrical p and p(+) np(+) lifetime samples were coated with Al2O3 and exposed to typical firing processes at temperatures between 700 degrees C and 850 degrees C. Up to a firing temperature of 825 degrees C the Al2O3 passivation is shown to be stable on highly boron-doped surfaces. An emitter saturation current density of similar to 60 fA/cm(2) could be measured for the p(+) np(+) samples, allowing a maximum open circuit voltage (V-oc) >695 mV. The firing stability of the Al2O3 is an important step for the realization of an industrial n-type silicon solar cell. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：233 / 235

页数：3

共 16 条

[1]

Altermatt P., 2006, Proceddings of 21st EU-PVSEC, P647

[2]

[Anonymous], P 23 EUR PHOT SOL EN

[3] High efficiency n-type Si solar cells on Al2O3-passivated boron emitters [J].

Benick, Jan ;

Hoex, Bram ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. ;

Schultz, Oliver ;

Glunz, Stefan W. .

APPLIED PHYSICS LETTERS, 2008, 92 (25)

[4] Measuring and interpreting the lifetime of silicon wafers [J].

Cuevas, A ;

Macdonald, D .

SOLAR ENERGY, 2004, 76 (1-3) :255-262

[5]

Cuevas A., 1997, Proceedings of the 14th EC PVSEC, P2416

[6]

DINGEMANS G, 2009, P 34 IEEE PHOT SPEC

[7] Minority carrier lifetime degradation in boron-doped Czochralski silicon [J].

Glunz, SW ;

Rein, S ;

Lee, JY ;

Warta, W .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2397-2404

[8] Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 [J].

Hoex, B. ;

Schmidt, J. ;

Bock, R. ;

Altermatt, P. P. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[9]

Kane D.E., 1985, PROC 18 IEEE PHOTOVO, P578

[10] General parameterization of Auger recombination in crystalline silicon [J].

Kerr, MJ ;

Cuevas, A .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :2473-2480

← 1 2 →