Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

被引:235
作者
Huber, Daniel [1 ]
Reindl, Marcus [1 ]
Huo, Yongheng [1 ,2 ,3 ,4 ]
Huang, Huiying [1 ]
Wildmann, Johannes S. [1 ]
Schmidt, Oliver G. [2 ]
Rastelli, Armando [1 ]
Trotta, Rinaldo [1 ]
机构
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, Altenbergerstr 69, A-4040 Linz, Austria
[2] IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germany
[3] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[4] USTC Shanghai, CAS Alibaba Quantum Comp Lab, Shanghai 201315, Peoples R China
基金
奥地利科学基金会;
关键词
D O I
10.1038/ncomms15506
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g((2))(0) = 0.002 +/- 0.002), high indistinguishability (0.93 +/- 0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94 +/- 0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.
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页数:7
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