Excitonic transfer in coupled InGaAs/GaAs quantum well to InAs quantum dots

被引：26

作者：

Mazur, Yu. I. ^{[1
]}

Liang, B. L.

Wang, Zh. M.

Guzun, D.

Salamo, G. J.

Zhuchenko, Z. Ya.

Tarasov, G. G.

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[2] Natl Acad Sci, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2360914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Peculiar mechanism of carrier transfer, excitonic trapping, from quantum well (QW) states to quantum dot (QD) states is clearly observed for the intentionally designed strained InAs:In0.3Ga0.7As/GaAs QD:QW structure. This transfer occurs very efficient at low excitation densities and low temperatures and explains the excitation density and nonmonotonic temperature dependences of the QW photoluminescence. (c) 2006 American Institute of Physics.

引用

页数：3

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