Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

被引：32

作者：

Anh, Le Duc ^{[1
]}

Kaneko, Daiki ^{[1
]}

Pham Nam Hai ^{[2
]}

Tanaka, Masaaki ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1520033, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 23期

关键词：

ELECTRON-SPIN POLARIZATION; TUNNEL-JUNCTIONS; FIELD; ZERO;

D O I：

10.1063/1.4937142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the crystal structure, transport, and magnetic properties of Fe-doped ferromagnetic semiconductor (Al1-x,Fe-x)Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room temperature and insulating behavior at low temperature. The (Al1-x,Fe-x) Sb thin films with x <= 10% maintain the zinc blende crystal structure of the host material AlSb. The (Al1-x,Fe-x) Sb thin film with x = 10% shows intrinsic ferromagnetism with a Curie temperature (T-C) of 40K. In the (Al1-x,Fe-x) Sb thin film with x = 14%, a sudden drop of the hole mobility and T-C was observed, which may be due to the microscopic phase separation. The observation of ferromagnetism in (Al,Fe)Sb paves the way to realize a spin-filtering tunnel barrier that is compatible with well-established III-V semiconductor devices. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 25 条

[1] Room-temperature spin filtering in a CoFe2O4/MgAl2O4/Fe3O4 magnetic tunnel barrier [J].

Chapline, Michael G. ;

Wang, Shan X. .

PHYSICAL REVIEW B, 2006, 74 (01)

[2] Role of magnetic anisotropy in spin-filter junctions [J].

Chopdekar, R. V. ;

Nelson-Cheeseman, B. B. ;

Liberati, M. ;

Arenholz, E. ;

Suzuki, Y. .

PHYSICAL REVIEW B, 2011, 83 (22)

[3] Spin filtering through ferromagnetic BiMnO3 tunnel barriers -: art. no. 020406 [J].

Gajek, M ;

Bibes, M ;

Barthélémy, A ;

Bouzehouane, K ;

Fusil, S ;

Varela, M ;

Fontcuberta, J ;

Fert, A .

PHYSICAL REVIEW B, 2005, 72 (02)

[4] Band alignment of semiconductors from density-functional theory and many-body perturbation theory [J].

Hinuma, Yoyo ;

Grueneis, Andreas ;

Kresse, Georg ;

Oba, Fumiyasu .

PHYSICAL REVIEW B, 2014, 90 (15)

[5] STRUCTURAL AND MAGNETIC-PROPERTIES OF FE3-XMN-XAL SYSTEM [J].

ILYUSHIN, AS ;

WALLACE, WE .

JOURNAL OF SOLID STATE CHEMISTRY, 1976, 17 (04) :385-387

[6] Origin and control of high-temperature ferromagnetism in semiconductors [J].

Kuroda, Shinji ;

Nishizawa, Nozomi ;

Takita, Koki ;

Mitome, Masanori ;

Bando, Yoshio ;

Osuch, Krzysztof ;

Dietl, Tomasz .

NATURE MATERIALS, 2007, 6 (06) :440-446

[7] Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells [J].

Le Duc Anh ;

Pham Nam Hai ;

Tanaka, Masaaki .

APPLIED PHYSICS LETTERS, 2014, 104 (04)

[8] Growth and characterization of Al1-XMnXas (X ≤ 4%) magnetic semiconductor:: thin film and superlattices [J].

Liu, ZY ;

De Boeck, J ;

Moshchalkov, VV ;

Borghs, G .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 242 :967-969

[9] Spin filtering through ferrimagnetic NiFe2O4 tunnel barriers [J].

Lüders, U ;

Bibes, M ;

Bouzehouane, K ;

Jacquet, E ;

Contour, JP ;

Fusil, S ;

Bobo, JF ;

Fontcuberta, J ;

Barthélémy, A ;

Fert, A .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[10] Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors [J].

Mizuno, Yosuke ;

Ohya, Shinobu ;

Hai, Pham Nam ;

Tanaka, Masaaki .

APPLIED PHYSICS LETTERS, 2007, 90 (16)

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