Improvement of polycrystalline InN thin films properties by localized ion source under low RF plasma ambient

被引：4

作者：

Alizadeh, Mahdi ^{[1
,2
]}

Goh, Boon Tong ^{[3
]}

Qadir, Karwan Wasman ^{[4
]}

Yousefi, Hamid ^{[5
]}

Mehmood, Muhammad Shahid ^{[1
]}

Rasuli, Reza ^{[2
]}

机构：

[1] Wisma R&D Univ Malaya, UMPEDAC, Higher Inst Ctr Excellence HICoE, Level 4,Jalan Pantai Baharu, Kuala Lumpur 59990, Malaysia

[2] Univ Zanjan, Fac Sci, Dept Phys, Zanjan 4537138791, Iran

[3] Univ Malaya, Fac Sci, Dept Phys, LDMRC, Kuala Lumpur 50603, Malaysia

[4] Salahaddin Univ Erbil, Coll Educ, Dept Phys, CNRL, Erbil 44002, Kurdistan Regio, Iraq

[5] Sahand Univ Technol, Fac Sci, Phys Dept, Tabriz 513351996, Iran

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 16期

基金：

美国国家科学基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; GROWTH; ABSORPTION; MORPHOLOGY; UNIFORM; LAYER; POWER; GAP; MBE;

D O I：

10.1007/s10854-019-01930-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline InN/Si(111) were prepared using plasma-assisted reactive evaporation technique under localized ion source (LIS). It was shown that in presence of LIS the structural, compositional, morphological and optical properties of the films can be engineered. XRD and Raman results revealed that shorter LIS-to-substrate distance (dLIS-s)results in higher crystallinity. From XPS and EDX mapping it was concluded that as dLIS-s decreases, the incorporation of N into the InN films is enhanced. More uniform, compact and smooth films are obtained as the LIS is placed more adjacent to the substrate. From the optical results it was found that by using LIS, the band gap energy (E-g) of the samples decreases from 1.97 to 1.23-1.37 eV which could be applicable in solar cell devices.

引用

收藏

页码：15534 / 15543

页数：10

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