Design of a low-power, implantable electromyogram amplifier

被引：0

作者：

Ananth, RS ^{[1
]}

Lee, EK ^{[1
]}

机构：

[1] Alfred Mann Fdn Sci Res, Valencia, CA 91355 USA

来源：

2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 4, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes the design of a low-power BiCMOS preamplifier for electromyogram signal detection in an implantable neural prosthetic device. The device is inductively powered and has to detect bioelectric signals in the range of 10 Hz to 10 kHz in the presence of large dc voltages at the detection electrodes. This was achieved by using a feedback loop to set the input common-mode voltage and obtain a high impedance input and biasing structure allowing then, the use of low-valued dc blocking capacitors. The proposed amplifier was designed and fabricated to provide a nominal differential voltage gain of 100, an ac input impedance of over 80 MOmega and an input referred noise voltage of 9.7uVrms in the 10 Hz to 10 kHz bandwidth. The amplifier consumes 122uW (37uA) when operating off a 3.3V supply and occupies an area of 0.125 mm(2) using a double-metal 0.8um BiCMOS process.

引用

页码：9 / 12

页数：4