Temperature-dependent tunneling through thermally grown SiO2 on n-type 4H-and 6H-SiC

被引：23

作者：

Waters, R ^{[1
]}

Van Zeghbroeck, B ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of field emission through thermally grown silicon dioxide (SiO2) on n-type 4H and 6H silicon carbide (SiC) substrates is reported. Room-temperature SiO2/SiC barrier heights, Phi(B), of 1.92 and 2.12 V are extracted for the 4H- and 6H-SiC samples, respectively, using a Fowler-Nordheim analysis. Barrier heights of 2.2 and 2.4 V along with a linear temperature-dependent barrier height lowering, Delta Phi(B)/Delta T, of 2.4 and 2.0 mV/K for 4H- and 6H-SiC are extracted using an alternative analytical expression for tunneling from semiconducting substrates derived previously. In both analyses, the temperature-dependent flatband voltage, using the measured room-temperature value, was included. (C) 2000 American Institute of Physics. [S0003-6951(00)03808-0].

引用

页码：1039 / 1041

页数：3

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