Nanometer-scale imaging of strain in Ge island on Si(001) surface

被引：16
作者：
Ide, T
Sakai, A
Shimizu, K
机构：
[1] NEC Corp, Device Anal Technol Labs, Nakahara Ku, Kawasaki, Kanagawa 2118666, Japan
[2] NEC Corp, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源：
THIN SOLID FILMS | 1999年 / 357卷 / 01期
关键词：
transmission electron microscopy; silicon; germanium; epitaxy;
D O I：
10.1016/S0040-6090(99)00468-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Lattice deformation in an island of Ge grown on a Si(001) surface is visualized by using Fourier transform mapping (FTM) of the transmission electron micrograph. The deformation images show not only strains normal to the Ge/Si interface but also strains parallel to the interface, as has been expected in Stranski-Krastanov growth. In addition, compression caused by the tilt of the lattice is found at the edges of the island. The compression is larger than the theoretical results calculated using a model that supposed the formation of a pure Ge island on Si substrate. This result suggests that interfacial mixing is caused by large stress at the island edges. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
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