2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

被引:72
作者
Chu, Junwei [1 ]
Wang, Yang [1 ]
Wang, Xuepeng [1 ]
Hu, Kai [1 ]
Rao, Gaofeng [1 ]
Gong, Chuanhui [1 ]
Wu, Chunchun [1 ]
Hong, Hao [2 ]
Wang, Xianfu [1 ]
Liu, Kaihui [2 ]
Gao, Chunlei [3 ,4 ]
Xiong, Jie [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China
[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[3] Fudan Univ, State Key Lab Surface Phys, Key Lab Micro & Nano Photon Struct MOE, Dept Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Key Lab Micro & Nano Photon Struct MOE, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
2D polarized materials; ferroelectric materials; ferromagnetic materials; ferrovalley materials; FIELD-EFFECT TRANSISTORS; VALLEY POLARIZATION; NEGATIVE CAPACITANCE; MONOLAYER MOS2; SPIN TRANSPORT; MOBILITY; CRYSTAL; INPLANE; ROOM; GENERATION;
D O I
10.1002/adma.202004469
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.
引用
收藏
页数:29
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