Optical and electrical studies of arsenic-implanted HgCdTe films grown c with molecular beam epitaxy on GaAs and Si substrates

被引：20

作者：

Izhnin, I. I. ^{[1
,2
]}

Voitsekhovsky, A. V. ^{[2
]}

Korotaev, A. G. ^{[2
]}

Fitsych, O. I. ^{[3
]}

Bonchyk, A. Yu. ^{[4
]}

Savytskyy, H. V. ^{[4
]}

Mynbaev, K. D. ^{[5
,6
]}

Varavin, V. S. ^{[7
]}

Dvoretsky, S. A. ^{[2
,7
]}

Mikhailov, N. N. ^{[7
]}

Yakushev, M. V. ^{[7
]}

Jakiela, R. ^{[8
]}

机构：

[1] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine

[2] Natl Res Tomsk State Univ, Tomsk 634050, Russia

[3] P Sahaydachnyi Army Acad, UA-79012 Lvov, Ukraine

[4] NAS Ukraine, Ya S Pidstryhach Inst Appl Problems Mech & Math, UA-79060 Lvov, Ukraine

[5] Ioffe Inst, St Petersburg 194021, Russia

[6] ITMO Univ, St Petersburg 197101, Russia

[7] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[8] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

INFRARED PHYSICS & TECHNOLOGY | 2017年 / 81卷

关键词：

HgCdTe; p-n junctions; Ion implantation; Defects; DAMAGE; DEPTH;

D O I：

10.1016/j.infrared.2016.12.006

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23-0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabrication of 'p(+)-n'-type photodiodes. First, formation of n(+)-p structure was investigated in p-type material, in order to study radiation-induced donor defects. Next, formation of p(+)-n structure was investigated in the course of implantation in n-type material and arsenic activation annealing. Influence of the graded-gap surface layer was found to be expressed in the degree of saturation of the concentration of radiation induced defects, With results obtained on arsenic-and boron-implanted material differing due to the difference in the ion masses. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：52 / 58

页数：7

共 22 条

[1] Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature [J].

Aguirre, MH ;

Cánepa, HR ;

de Reca, NEW .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) :5745-5748

[2]

Bazovkin V. M., 2014, INFR PHYS TECHNOL, V76, P72

[3] The nature of the compositional dependence of p-n junction depth in ion-milled p-HgCdTe [J].

Bogoboyashchyy, VV ;

Izhnin, II ;

Mynbaev, KD .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (02) :116-123

[4] Conversion of conductivity type in Cu-doped Hg0.8Cd0.2Te crystals under ion beam milling [J].

Bogoboyashchyy, VV ;

Elizarov, AI ;

Izhnin, II .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) :726-732

[5]

Bommena R., J ELECT MAT, V44

[6] ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT [J].

DESTEFANIS, GL .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :700-722

[7]

Dvoretsky S. A., 1998, AVTOMETRIYA, V5, P73

[8] Ion implantation and ion milling in MBE Hg1-xCdxTe films [J].

Fitsych, O. I. ;

Voitsekhovskii, A. V. ;

Grigorjev, D. V. ;

Mikhailov, N. N. ;

Talipov, N. H. ;

Mynbaev, K. D. ;

Izhnin, I. I. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 272 :313-317

[9] Recent progress for HGCDTE quantum detection in France [J].

Gravrand, O. ;

Destefanis, G. .

INFRARED PHYSICS & TECHNOLOGY, 2013, 59 :163-171

[10]

Izhnin I. I., SEMICOND SCI TECHNOL, V27

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