A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS

被引：69

作者：

Thyagarajan, Siva V. ^{[1
]}

Niknejad, Ali M. ^{[1
]}

Hull, Christopher D. ^{[2
]}

机构：

[1] Univ Calif Berkeley, Dept Elect & Comp Engn, Berkeley, CA 94720 USA

[2] Intel Corp, Intel Mobile Commun, Hillsboro, OR 97124 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2014年 / 61卷 / 08期

基金：

美国国家科学基金会;

关键词：

Millimeter-wave; neutralization; power amplifier; power combiner; transformer; V-band; 60; GHz; TRANSCEIVER;

D O I：

10.1109/TCSI.2014.2333682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS technology scaling has enabled the design of high speed and efficient digital circuits. However, the continued scaling is detrimental to the design of RF and mm-wave systems. Higher sensitivity to process variations and inaccuracies in modeling of active and passive devices pose another challenge to the design of these systems at deep submicron technology nodes. This paper describes the design of a 60 GHz power amplifier in 28 nm CMOS technology. A drain-source neutralization technique maintains the stability of the PA and the wideband nature is achieved by the application of low-k transformer networks. The PA comprises of three stages and achieves an overall bandwidth of 11 GHz with a peak gain of 24.4 dB. Using a two-way transmission line based power combiner, the PA delivers a saturated output power of 16.5 dBm with a peak power added efficiency (PAE) of 12.6%.

引用

页码：2253 / 2262

页数：10

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