Localization of excitons in Zn1-xMgxSe and Cd1-xMgxSe crystals

被引：8
作者：
Firszt, F
Meczynska, H
Legowski, S
Paszkowicz, W
机构：
[1] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2004年 / 371卷 / 1-2期
关键词：
semiconductors; crystal growth; luminescence; electronic states (localized);
D O I：
10.1016/j.jallcom.2003.06.012
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoluminescence characteristics as a function of temperature were investigated for Zn1-xMgxSe (0 < x < 0.63) and Cd1-xMgxSe (0 < x < 0.55) crystals grown by the high pressure Bridgman method. In the composition range investigated Cd1-xMgxSe crystallizes in a wurtzite structure while Zn1-xMgxSe crystallizes in sphelerite and wurtzite for Mg content lower and higher than 0.18, respectively. The temperature dependence of luminescence can be explained by taking into account, that statistical fluctuations of local composition in solid solutions cause spatial fluctuations of potential, leading to localization of excitons at low temperatures. This phenomenon strongly influences radiative recombination processes in such mixed semiconductors. All observed luminescence characteristics can be explained by this exciton localization model. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：107 / 110
页数：4
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