Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

被引：8
|
作者：
Bayram, C. [1 ]
Razeghi, M. [1 ]
Rogers, D. J. [2 ]
Teherani, F. Hosseini [2 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA
[2] Nanovation, F-91400 Orsay, France
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期
关键词：
aluminium compounds; annealing; atomic force microscopy; etching; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; photoluminescence; p-n junctions; scanning electron microscopy; semiconductor quantum wells; X-ray diffraction; zinc compounds; QUANTUM-WELLS; PLASMA; FILMS;
D O I：
10.1116/1.3116590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.
引用
收藏
页码：1784 / 1788
页数：5
相关论文
共 50 条
  • [21] Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer
    Huang Wei
    Li Yue-Long
    Ren Hui-Zhi
    Wang Peng-Yang
    Wei Chang-Chun
    Hou Guo-Fu
    Zhang De-Kun
    Xu Sheng-Zhi
    Wang Guang-Cai
    Zhao Ying
    Yuan Ming-Jian
    Zhang Xiao-Dan
    ACTA PHYSICA SINICA, 2019, 68 (12)
  • [22] Zinc oxide and metal phthalocyanine based hybrid P-N junction diodes
    Singh, Budhi
    Ghosh, Subhasis
    APPLIED PHYSICS LETTERS, 2013, 103 (13)
  • [23] Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes
    Chen G.-C.
    Fan G.-H.
    Optoelectronics Letters, 2014, 10 (04) : 250 - 252
  • [24] n-Type ternary zinc complexes: Synthesis, physicochemical properties and organic light emitting diodes application
    Kumar, Amit
    Palai, Akshaya K.
    Srivastava, Ritu
    Kadyan, Pratap S.
    Kamalasanan, Modeeparampil N.
    Singh, Ishwar
    JOURNAL OF ORGANOMETALLIC CHEMISTRY, 2014, 756 : 38 - 46
  • [25] Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
    Arehart, A. R.
    Allerman, A. A.
    Ringel, S. A.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (11)
  • [26] Determination of carrier diffusion length in p- and n-type GaN
    Hafiz, Shopan
    Metzner, Sebastian
    Zhang, Fan
    Monavarian, Morteza
    Avrutin, Vitaliy
    Morkoc, Hadis
    Karbaum, Christopher
    Bertram, Frank
    Christen, Juergen
    Gil, Bernard
    Ozgur, Umit
    GALLIUM NITRIDE MATERIALS AND DEVICES IX, 2014, 8986
  • [27] Fabrication and characterization of p-n junctions based on ZnO and CuPc
    Gupta, R. K.
    Yakuphanoglu, F.
    Ghosh, K.
    Kahol, P. K.
    MICROELECTRONIC ENGINEERING, 2011, 88 (10) : 3067 - 3069
  • [28] Growth and Fabrication of Reliable n-ZnO/p-GaN Heterojunction Light-Emitting Diodes
    Jeong, Seonghoon
    Kim, Kyoung-Kook
    Kim, Hyunsoo
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2015, 10 (02) : 260 - 264
  • [29] Light emission from planar-type ZnO p-n junction fabricated by PLD
    Kusumori, Takeshi
    Nakao, Setsuo
    Yoshimura, Kazuki
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 10, 2013, 10 (10): : 1261 - 1264
  • [30] Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method
    Sang, Nguyen Xuan
    Beng, Tay Chuan
    Jie, Tang
    Fitzgerald, Eugene A.
    Jin, Chua Soo
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (08): : 1618 - 1623
12345