Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

被引：8

作者：

Bayram, C. ^{[1
]}

Razeghi, M. ^{[1
]}

Rogers, D. J. ^{[2
]}

Teherani, F. Hosseini ^{[2
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA

[2] Nanovation, F-91400 Orsay, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期

关键词：

aluminium compounds; annealing; atomic force microscopy; etching; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; photoluminescence; p-n junctions; scanning electron microscopy; semiconductor quantum wells; X-ray diffraction; zinc compounds; QUANTUM-WELLS; PLASMA; FILMS;

D O I：

10.1116/1.3116590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.

引用

收藏

页码：1784 / 1788

页数：5

相关论文

共 16 条

[1] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].

ADESIDA, I ;

MAHAJAN, A ;

ANDIDEH, E ;

KHAN, MA ;

OLSEN, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2777-2779

[2] High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas [J].

Bae, JW ;

Jeong, CH ;

Kim, HK ;

Kim, KK ;

Cho, NG ;

Seong, TY ;

Park, SJ ;

Adesida, I ;

Yeom, GY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B) :L535-L537

[3] A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN [J].

Bayram, C. ;

Teherani, F. Hosseini ;

Rogers, D. J. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

[4] Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN [J].

Bayram, C. ;

Pau, J. L. ;

McClintock, R. ;

Razeghi, M. .

APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 95 (02) :307-314

[5] Delta-doping optimization for high quality p-type GaN [J].

Bayram, C. ;

Pau, J. L. ;

McClintock, R. ;

Razeghi, M. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (08)

[6] Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters [J].

Cho, YH ;

Lee, SK ;

Kwack, HS ;

Kim, JY ;

Lim, KS ;

Kim, HM ;

Kang, TW ;

Lee, SN ;

Seon, MS ;

Nam, OH ;

Park, YJ .

APPLIED PHYSICS LETTERS, 2003, 83 (13) :2578-2580

[7] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2 [J].

Gardner, N. F. ;

Mueller, G. O. ;

Shen, Y. C. ;

Chen, G. ;

Watanabe, S. ;

Gotz, W. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (24)

[8]

HO L, 1996, APPL PHYS LETT, V69, P2701

[9] Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries [J].

Lim, Wantae ;

Voss, Lars ;

Khanna, Rohit ;

Gila, B. R. ;

Norton, D. P. ;

Pearton, S. J. ;

Ren, F. .

APPLIED SURFACE SCIENCE, 2006, 253 (02) :889-894

[10] Investigation of process window during dry etching of ZnO thin films by CH4-H2-Ar inductively coupled plasma [J].

Na, SW ;

Shin, MH ;

Chung, YM ;

Han, JG ;

Lee, NE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (04) :898-904