Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

被引：8

作者：

Bayram, C. ^{[1
]}

Razeghi, M. ^{[1
]}

Rogers, D. J. ^{[2
]}

Teherani, F. Hosseini ^{[2
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA

[2] Nanovation, F-91400 Orsay, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期

关键词：

aluminium compounds; annealing; atomic force microscopy; etching; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; photoluminescence; p-n junctions; scanning electron microscopy; semiconductor quantum wells; X-ray diffraction; zinc compounds; QUANTUM-WELLS; PLASMA; FILMS;

D O I：

10.1116/1.3116590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.

引用

页码：1784 / 1788

页数：5

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