Multilayer graphene on hBN substrate waveguide modulator

被引：5
作者：
Zarepour, Mehdi [1 ]
Abdipour, Abdolali [1 ]
Moradi, Gholamreza [1 ]
机构：
[1] Amirkabir Univ Technol, Elect Engn Dept, Microwave Mm Wave & Wireless Commun Res Lab, Tehran, Iran
来源：
IET OPTOELECTRONICS | 2020年 / 14卷 / 04期
关键词：
graphene; light transmission; optical waveguides; optical modulation; optical multilayers; optical losses; hBN substrate waveguide modulator; multilayer graphene-based optical modulator; hexagonal boron nitride; electric field; graphene layers; insertion losses; transverse magnetic mode; diagonal graphene optical modulators; propagation; optical characteristics; gate voltage; switching performance; size; 40; 0; mum; frequency; 193; 0 THz to 200; THz; wavelength; 1; 5 mum to 1; 55; C; BN; OPTICAL MODULATOR; ELECTROABSORPTION MODULATOR;
D O I：
10.1049/iet-opt.2019.0008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A multilayer graphene-based optical modulator is proposed in this study. The structure is made of several layers of graphene on hexagonal boron nitride (hBN), working at 193 to 200 THz (1.5 to 1.55 mu m) band. In this modulator, the electric field passes through graphene layers instead of passing through the silicon waveguide, causing very low insertion losses about 4 x 10(-3) dB for 40 mu m long device. It is shown that the transverse magnetic mode has a more efficient propagation in the modulator. Due to the passage of light from graphene layers and the graphene's optical characteristics, light transmission can be controlled with less variation in gate voltage, and it has the better switching performance concerning monolayer, bilayer and diagonal graphene optical modulators.
引用
收藏
页码：176 / 181
页数：6
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