Temperature dependence of operational stability of organic light emitting diodes based on mixed emitter layers

被引:64
作者
Vamvounis, G
Aziz, H
Hu, NX
Popovic, ZD
机构
[1] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada
[2] Simon Fraser Univ, Dept Chem, Burnaby, BC V5A 1S6, Canada
关键词
AlQ(3); degradation; organic light emitting diode; OLED; stability; temperature;
D O I
10.1016/j.synthmet.2003.10.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Temperature dependence of electroluminescence degradation is Studied in organic light emitting diodes (OLEDs) containing an emitting layer composed of a mixture of tris(8-hydroxyquinoline)aluminum (AlQ(3)) electron transport and emitter material and four different hole transport materials (HTMs) (N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine) (NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)(1,1'-biphenyl)-4,4'-diamine (TPD), 1,1'-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) or 4,4',4"-tris[3-methylphenyl(phenyl)amino]tri-phenylamine (MTDATA). The emitting layer is sandwiched between hole and electron transport layers. Activation energy of device degradation was determined from operational stability measurements for devices with different HTMs operated at various temperatures. It was found that the device lifetime correlates with the difference in HOMO energy level between AlQ(3) and the HTM, where greater energy differences lead to longer device lifetimes. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:69 / 73
页数:5
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