Room-temperature pulsed operation of 1.3 mu m GaInNAs/GaAs laser diode

被引：105

作者：

Sato, S

Osawa, Y

Saitoh, T

Fujimura, I

机构：

[1] Gen. Electronics R. and D. Center, Ricoh Co., Ltd., Takadate, Natori, Miyagi 981-12

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 16期

关键词：

semiconductor junction lasers; chemical vapour deposition;

D O I：

10.1049/el:19970935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 mu m at room-temperature under pulsed operation is demonstrated.

引用

页码：1386 / 1387

页数：2

共 3 条

[1] Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
Kondow, M
Natatsuka, S
Kitatani, T
Yazawa, Y
Okai, M
[J]. ELECTRONICS LETTERS, 1996, 32 (24) : 2244 - 2245
[2] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
Kondow, M
Uomi, K
Niwa, A
Kitatani, T
Watahiki, S
Yazawa, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1273 - 1275
[3] Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition
Sato, SI
Osawa, Y
Saitoh, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2671 - 2675

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