Room-temperature pulsed operation of 1.3 mu m GaInNAs/GaAs laser diode

被引：105
作者：
Sato, S
Osawa, Y
Saitoh, T
Fujimura, I
机构：
[1] Gen. Electronics R. and D. Center, Ricoh Co., Ltd., Takadate, Natori, Miyagi 981-12
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 16期
关键词：
semiconductor junction lasers; chemical vapour deposition;
D O I：
10.1049/el:19970935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 mu m at room-temperature under pulsed operation is demonstrated.
引用
收藏
页码：1386 / 1387
页数：2
相关论文
共 3 条
[1]   Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode [J].
Kondow, M ;
Natatsuka, S ;
Kitatani, T ;
Yazawa, Y ;
Okai, M .
ELECTRONICS LETTERS, 1996, 32 (24) :2244-2245
[2]   GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].
Kondow, M ;
Uomi, K ;
Niwa, A ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275
[3]   Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition [J].
Sato, SI ;
Osawa, Y ;
Saitoh, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2671-2675
1