Effects of thickness on energy storage of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric films deposited on LaNiO3 electrodes

被引：28
作者：
Zhao, Quanliang [1 ]
Lei, Hong [1 ]
He, Guangping [1 ]
Di, Jiejian [1 ]
Wang, Dawei [1 ]
Tan, Peipei [1 ]
Jin, Haibo [2 ]
Cao, Maosheng [2 ]
机构：
[1] North China Univ Technol, Sch Mech & Mat Engn, Beijing 100144, Peoples R China
[2] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2016年 / 42卷 / 01期
基金：
中国国家自然科学基金; 北京市自然科学基金;
关键词：
Antiferroelectric film; Thickness; Energy storage; Phase transition; THIN-FILMS; FATIGUE ENDURANCE; PERFORMANCE;
D O I：
10.1016/j.ceramint.2015.09.067
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
(Pb0.97La0.02)(Zr0.9Sn0.05Ti0.05)O-3 (PLZST) antiferroelectric films were deposited on LaNiO3/Si substrates by a sol gel method. The XRD results show that the PLZST films are restrained by the LaNiO3 films and coexisted ferroelectric phases are induced by the internal compressive stress. As the PLZST film thickness increases, the remnant polarization and dielectric constant decrease while the energy storage density increases. It could be explained by the increasing antiferroelectric phase in the PLZST film with large thickness. Therefore, the energy storage property can be improved by increasing the PLZST film thickness. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码：1314 / 1317
页数：4
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