SOICMOS compatible low-power microheater optimization for the fabrication of smart gas sensors

被引：53

作者：

Laconte, J ^{[1
]}

Dupont, U ^{[1
]}

Flandre, D ^{[1
]}

Raskin, JP ^{[1
]}

机构：

[1] Catholic Univ Louvain, Microelect Lab, Microwave Lab, Res Ctr Micro & Nanoscop Elect Dev & Mat, B-1348 Louvain, Belgium

来源：

IEEE SENSORS JOURNAL | 2004年 / 4卷 / 05期

关键词：

bulk micromachining; CMOS-; compatibility; gas sensor; microheater; silicon-on-insulator;

D O I：

10.1109/JSEN.2004.833516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an original design of a polysilicon loop-shaped microheater on a 1-mum thin-stacked dielectric membrane is presented. This design ensures high thermal uniformity and insulation and very low power consumption (20 mW for heating at 400 degreesC). Moreover, the use of completely CMOS compatible tetramethyl ammonium hydroxide-based bulk-micro-machining techniques allows an easy, smart gas sensor integration in SOI-CMOS technology.

引用

页码：670 / 680

页数：11

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