Effects of the Electron-Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure

被引：1

作者：

Bovkun, L. S. ^{[1
,2
]}

Ikonnikov, A. V. ^{[3
]}

Krishtopenko, S. S. ^{[4
,5
]}

Aleshkin, V. Ya. ^{[1
]}

Zholudev, M. S. ^{[1
]}

Ruffenach, S. ^{[4
]}

Consejo, C. ^{[4
]}

Teppe, F. ^{[4
]}

Dvoretskii, S. A. ^{[5
]}

Mikhailov, N. N. ^{[5
]}

Potemski, M. ^{[2
]}

Orlita, M. ^{[2
]}

Gavrilenko, V. I. ^{[1
,6
]}

机构：

[1] Russian Acad Sci, Inst Appl Phys, Fed Res Ctr, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] CNRS, Lab Natl Champs Magnet Intenses, UGA, EMFL,UPS,INSA, FR-38042 Grenoble, France

[3] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[4] Univ Montpellier, CNRS, Lab Charles Coulomb, UMR 5221, F-34095 Montpellier, France

[5] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[6] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

来源：

JETP LETTERS | 2020年 / 112卷 / 08期

基金：

俄罗斯科学基金会;

关键词：

CYCLOTRON-RESONANCE; LANDAU-LEVELS;

D O I：

10.1134/S0021364020200059

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magneto-absorption in HgTe/CdHgTe quantum wells with an inverted band structure in magnetic fields up to 30 T has been studied. It has been shown that the positions of magneto-absorption lines for transitions from the zero-mode Landau levels in a wide range of magnetic field cannot in principle be described in the "single-electron" approximation using the eight-band Kane model even taking into account effects associated with the absence of spatial inversion symmetry. The revealed dependence of the energies of optical transitions on the magnetic field can be qualitatively explained within a "many-body" picture, where transitions between Landau levels are considered as collective modes hybridized by the electron-electron interaction.

引用

页码：508 / 512

页数：5

共 27 条

[1] Quantum spin Hall effect and topological phase transition in HgTe quantum wells
Bernevig, B. Andrei
Hughes, Taylor L.
Zhang, Shou-Cheng
[J]. SCIENCE, 2006, 314 (5806) : 1757 - 1761
[2] Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T
Bovkun, L. S.
Ikonnikov, A. V.
Aleshkin, V. Ya.
Maremyanin, K. V.
Mikhailov, N. N.
Dvoretskii, S. A.
Krishtopenko, S. S.
Teppe, F.
Piot, B. A.
Potemski, M.
Orlita, M.
Gavrilenko, V. I.
[J]. OPTO-ELECTRONICS REVIEW, 2019, 27 (02) : 213 - 218
[3] Landau level spectroscopy of valence bands in HgTe quantum wells: effects of symmetry lowering
Bovkun, L. S.
Ikonnikov, A., V
Aleshkin, V. Ya
Spirin, K. E.
Gavrilenko, V., I
Mikhailov, N. N.
Dvoretskii, S. A.
Teppe, F.
Piot, B. A.
Potemski, M.
Orlita, M.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 31 (14)
[4] Büttner B, 2011, NAT PHYS, V7, P418, DOI [10.1038/nphys1914, 10.1038/NPHYS1914]
[5] Magnetoplasmons and band nonparabolicity in two-dimensional electron gas
Bychkov, YA
Martinez, G
[J]. PHYSICAL REVIEW B, 2002, 66 (19): : 1 - 4
[6] BYCHKOV YA, 1981, JETP LETT+, V33, P143
[7] Growth of HgTe Quantum Wells for IR to THz Detectors
Dvoretsky, S.
Mikhailov, N.
Sidorov, Yu.
Shvets, V.
Danilov, S.
Wittman, B.
Ganichev, S.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (07) : 918 - 923
[8] INTERFACE STATES IN SUBBAND STRUCTURE OF SEMICONDUCTOR QUANTUM-WELLS
GERCHIKOV, LG
SUBASHIEV, AV
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 160 (02): : 443 - 457
[9] Temperature-dependent magnetospectroscopy of HgTe quantum wells
Ikonnikov, A. V.
Krishtopenko, S. S.
Drachenko, O.
Goiran, M.
Zholudev, M. S.
Platonov, V. V.
Kudasov, Yu. B.
Korshunov, A. S.
Maslov, D. A.
Makarov, I. V.
Surdin, O. M.
Philippov, A. V.
Marcinkiewicz, M.
Ruffenach, S.
Teppe, F.
Knap, W.
Mikhailov, N. N.
Dvoretsky, S. A.
Gavrilenko, V. I.
[J]. PHYSICAL REVIEW B, 2016, 94 (15)
[10] Cyclotron resonance in HgTe/CdTe(013) narrowband heterostructures in quantized magnetic fields
Ikonnikov, A. V.
Zholudev, M. S.
Marem'yanin, K. V.
Spirin, K. E.
Lastovkin, A. A.
Gavrilenko, V. I.
Dvoretskii, S. A.
Mikhailov, N. N.
[J]. JETP LETTERS, 2012, 95 (08) : 406 - 410

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